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   ICON LaAlO3 single crystal
 
 
 
 

Low dielectric constant

Low Microwave loss

high-temperature superconducting thin film

 

 
Description  
 

LaAlO3 single crystal is the most important industrialized , large-size high-temperature superconducting thin film substrate single crystal material. Its growth with the Czochralski method , 2 inches in diameter and larger single crystal and the substrate can be obtained It's suitable for the production of high temperature superconducting microwave electronic devices (such as long-distance communication in high-temperature superconducting microwave filters etc.) 

properties:

Crystal structure

M6(normal temperature)

M3(>435℃)

Unit cell constant

M6 a=5.357A c=13.22 A

M3 a=3.821 A

Melt point(℃)

2080

Density

6.52(g/cm3

Hardness

6-6.5(mohs)

Thermal expansion

9.4x10-6/℃

Dielectric constants

ε=21

Secant loss(10ghz)

~3×10-4@300k,~0.6×10-4@77k

Color and appearance

To anneal and conditions differ from brown to brownish

Chemical stability

Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3po4

Characteristics

For microwave electron device

Growth method

Czochralski method

Size

10x3,10x5,10x10,15x15,,20x15,20x20,

Ф15,Ф20,Ф1″,Ф2″,Ф2.6″

Thickness

0.5mm,1.0mm

Polishing

Single or double

Crystal Orientation

<100> <110> <111>

redirection precision

±0.5°

Redirection the edge:

2°(special in 1°)

Angle of crystalline

Special size and orientation are available upon request

Ra:

≤5Å(5µm×5µm)

Pack

100 clean bag,1000 exactly clean bag

 
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