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GaAs Substrate

Advantage

1.High smoothness
2.High lattice matching (MCT)
3.Low dislocation density
4.High infrared transmittance
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  • Gallium Arsenide (GaAs) is an important and mature group III-Ⅴ compound semiconductor, it's widely used in the field of optoelectronics and microelectronics. GaAs is mainly divided into two categories: semi-insulating GaAs and N-type GaAs. The semi-insulating GaAs is mainly used to make integrated circuits with MESFET, HEMT and HBT structures, which are used in radar, microwave and millimeter wave communications, ultra-high-speed computers and optical fiber communications. The  N-type GaAs is mainly used in LD, LED, near infrared lasers, quantum well high-power lasers and high-efficiency solar cells. 

    Properties:

    Crystal

    Doped

    Conduction Type

    Concentration of Flows cm-3

    Density cm-2

    Growth Method
    Max Size

    GaAs

    None

    Si

    /

    <5×105

    LEC
    HB
    Dia3″

    Si

    N

    >5×1017

    Cr

    Si

    /

    Fe

    N

    ~2×1018

    Zn

    P

    >5×1017

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