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GaAs Substrate

Advantage：

1.High smoothness
2.High lattice matching (MCT)
3.Low dislocation density
4.High infrared transmittance
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Gallium Arsenide (GaAs) is an important and mature group III-Ⅴ compound semiconductor, it's widely used in the field of optoelectronics and microelectronics. GaAs is mainly divided into two categories: semi-insulating GaAs and N-type GaAs. The semi-insulating GaAs is mainly used to make integrated circuits with MESFET, HEMT and HBT structures, which are used in radar, microwave and millimeter wave communications, ultra-high-speed computers and optical fiber communications. The N-type GaAs is mainly used in LD, LED, near infrared lasers, quantum well high-power lasers and high-efficiency solar cells.

Properties:

Crystal	Doped	Conduction Type	Concentration of Flows cm-3	Density cm-2	Growth Method Max Size
GaAs	None	Si	/	<5×105	LEC HB Dia3″
	Si	N	>5×1017
	Cr	Si	/
	Fe	N	~2×1018
	Zn	P	>5×1017

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