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Ge Substrate

Advantage：

1.Sb/N doped

2.No doping

3.Semiconductor

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Description Related Products

Ge single crystal is excellent semiconductor for Infrared and IC industry.

Properties:

Growth Method

Czochralski method

Crystal Structure

M3

Unit Cell Constant

a=5.65754 Å

Density（g/cm³）

5.323

Melting Point（℃）

937.4

Doped Material

No doped

Sb-doped

In / Ga –doped

Type

/

N

P

Resistivity

＞35Ωcm

0.05Ωcm

0.05~0.1Ωcm

EPD

＜4×103∕cm2

＜4×103∕cm2

＜4×103∕cm2

Size

10x3，10x5，10x10，15x15，，20x15，20x20，

dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm

Thickness

0.5mm，1.0mm

Polishing

Single or double

Crystal Orientation

<100>、<110>、<111>、±0.5º

Ra

≤5Å（5µm×5µm）

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Growth Method	Czochralski method
Crystal Structure	M3
Unit Cell Constant	a=5.65754 Å
Density（g/cm³）	5.323
Melting Point（℃）	937.4
Doped Material	No doped	Sb-doped	In / Ga –doped
Type	/	N	P
Resistivity	＞35Ωcm	0.05Ωcm	0.05~0.1Ωcm
EPD	＜4×103∕cm2	＜4×103∕cm2	＜4×103∕cm2
Size	10x3，10x5，10x10，15x15，，20x15，20x20，
	dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness	0.5mm，1.0mm
Polishing	Single or double
Crystal Orientation	<100>、<110>、<111>、±0.5º
Ra	≤5Å（5µm×5µm）