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LaAlO3 Substrate

Advantage：

1.Low dielectric constant

2.Low Microwave loss

3.High-temperature superconducting thin film

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LaAlO₃ single crystal is the most important industrialized, large-size high-temperature superconducting thin film substrate single crystal material. Its growth with the Czochralski method , 2 inches in diameter and larger single crystal and the substrate can be obtained It's suitable for the production of high temperature superconducting microwave electronic devices (such as long-distance communication in high-temperature superconducting microwave filters etc.)

Properties:

Crystal Structure

M6（normal temperature）

M3（>435℃）

Unit Cell Constant

M6 a=5.357A c=13.22 A

M3 a=3.821 A

Melting Point（℃）

2080

Density（g/cm³）

6.52

Hardness (Mho)

6-6.5

Thermal Expansion

9.4x10^-6/℃

Dielectric Constants

ε=21

Secant Loss（10ghz)

～3×10^-4@300k,～0.6×10^-4@77k

Color and Appearance

To anneal and conditions differ from brown to brownish

Chemical Stability

Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3po4

Characteristics

For microwave electron device

Growth Method

Czochralski method

Size

10x3，10x5，10x10，15x15，，20x15，20x20，

Ф15,Ф20，Ф1″，Ф2″,Ф2.6″

Thickness

0.5mm，1.0mm

Polishing

Single or double

Crystal Orientation

＜100＞＜110＞＜111＞

Redirection Precision

±0.5°

Redirection the Edge

2°（special in 1°）

Angle of Crystalline

Special size and orientation are available upon request

Ra

≤5Å（5µm×5µm）

Pack

100 clean bag，1000 exactly clean bag

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