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LaAlO3 Substrate

Advantage

1.Low dielectric constant

2.Low Microwave loss

3.High-temperature superconducting thin film

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  • LaAlO3 single crystal is the most important industrialized, large-size high-temperature superconducting thin film substrate single crystal material. Its growth with the Czochralski method , 2 inches in diameter and larger single crystal and the substrate can be obtained It's suitable for the production of high temperature superconducting microwave electronic devices (such as long-distance communication in high-temperature superconducting microwave filters etc.) 

    Properties:


    Crystal Structure

    M6normal temperature

    M3>435

    Unit Cell Constant

    M6 a=5.357A c=13.22 A

    M3 a=3.821 A

    Melting Point

    2080

    Densityg/cm3

    6.52

    Hardness (Mho)

    6-6.5

    Thermal Expansion

    9.4x10-6/

    Dielectric Constants

    ε=21

    Secant Loss10ghz)

    3×10-4@300k,0.6×10-4@77k

    Color and Appearance

    To anneal and conditions differ from brown to brownish

    Chemical Stability

    Room temperature is not dissoluble in minerals, the temperature is greater than 150 in soluble h3po4

    Characteristics

    For microwave electron device

    Growth Method

    Czochralski method

    Size

    10x310x510x1015x15,,20x1520x20

    Ф15,Ф20Ф1″Ф2″,Ф2.6″

    Thickness

    0.5mm1.0mm

    Polishing

    Single or double

    Crystal Orientation

    100 110 111

    Redirection Precision

    ±0.5°

    Redirection the Edge

    special in 1°

    Angle of Crystalline

    Special size and orientation are available upon request

    Ra

    ≤5Å5µm×5µm

    Pack

    100 clean bag1000 exactly clean bag



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