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SiC Substrate

Advantage：

1.High smoothness
2.High lattice matching (MCT)
3.Low dislocation density
4.High infrared transmittance
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Silicon carbide (SiC) is a binary compound of Group IV-IV, it's the only stable solid compound in Group IV of the Periodic Table, It's an important semiconductor. SiC has excellent thermal, mechanical, chemical and electrical properties, which make it to be the one of the best materials for making high-temperature, high-frequency, and high-power electronic devices, the SiC also can be used as a substrate material for GaN-based blue light-emitting diodes. At present, 4H-SiC is the mainstream products in the market, and the conductivity type is divided into semi-insulating type and N type.

Properties:

Item	2 inch 4H N-type
Diameter	2inch (50.8mm)
Thickness	350+/-25um
Orientation	off axis 4.0˚ toward <1120> ± 0.5˚
Primary Flat Orientation	<1-100> ± 5°
Secondary Flat Orientation	90.0˚ CW from Primary Flat ± 5.0˚, Si Face up
Primary Flat Length	16 ± 2.0
Secondary Flat Length	8 ± 2.0
Grade	Production grade (P)	Research grade (R)	Dummy grade (D)
Resistivity	0.015~0.028 Ω·cm	< 0.1 Ω·cm	< 0.1 Ω·cm
Micropipe Density	≤ 1 micropipes/ cm²	≤ 1 0micropipes/ cm²	≤ 30 micropipes/ cm²
Surface Roughness	Si face CMP Ra <0.5nm, C Face Ra <1 nm		N/A, usable area > 75%
TTV	< 8 um	< 10um	< 15 um
Bow	< ±8 um	< ±10um	< ±15um
Warp	< 15 um	< 20 um	< 25 um
Cracks	None	Cumulative length ≤ 3 mm on the edge	Cumulative length ≤10mm, single length ≤ 2mm
Scratches	≤ 3 scratches, cumulative length < 1* diameter	≤ 5 scratches, cumulative length < 2* diameter	≤ 10 scratches, cumulative length < 5* diameter
Hex Plates	maximum 6 plates, <100um	maximum 12 plates, <300um	N/A, usable area > 75%
Polytype Areas	None	Cumulative area ≤ 5%	Cumulative area ≤ 10%
Contamination	None

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