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SiC Substrate

Advantage

1.High smoothness
2.High lattice matching (MCT)
3.Low dislocation density
4.High infrared transmittance
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  • Silicon carbide (SiC) is a binary compound of Group IV-IV, it's the only stable solid compound in Group IV of the Periodic Table, It's an important semiconductor. SiC has excellent thermal, mechanical, chemical and electrical properties, which make it to be the one of the best materials for making high-temperature, high-frequency, and high-power electronic devices, the SiC also can be used as a substrate material for GaN-based blue light-emitting diodes. At present, 4H-SiC is the mainstream products in the market, and the conductivity type is divided into semi-insulating type and N type.

    Properties:

    Item

    2 inch 4H N-type

    Diameter

    2inch (50.8mm)

    Thickness

    350+/-25um

    Orientation

    off axis 4.0˚ toward <1120> ± 0.5˚

    Primary Flat Orientation

    <1-100> ± 5°

    Secondary Flat
    Orientation

    90.0˚ CW from Primary Flat ± 5.0˚, Si Face up

    Primary Flat Length

    16 ± 2.0

    Secondary Flat Length

    ± 2.0

    Grade

    Production grade (P)

    Research grade (R)

    Dummy grade (D)

    Resistivity

    0.015~0.028 Ω·cm

    < 0.1 Ω·cm

    < 0.1 Ω·cm

    Micropipe Density

    ≤ 1 micropipes/ cm²

    ≤ 1 0micropipes/ cm²

    ≤ 30 micropipes/ cm²

    Surface Roughness

    Si face CMP Ra <0.5nm, C Face Ra <1 nm

    N/A, usable area > 75%

    TTV

    < 8 um

    < 10um

    < 15 um

    Bow

    ±8 um

    ±10um

    ±15um

    Warp

    < 15 um

    < 20 um

    < 25 um

    Cracks

    None

    Cumulative length ≤ 3 mm
    on the edge

    Cumulative length ≤10mm,
    single
    length ≤ 2mm

    Scratches

    ≤ 3 scratches, cumulative
    length < 1* diameter

    ≤ 5 scratches, cumulative
    length < 2* diameter

    ≤ 10 scratches, cumulative
    length < 5* diameter

    Hex Plates

    maximum 6 plates,
    <100um

    maximum 12 plates,
    <300um

    N/A, usable area > 75%

    Polytype Areas

    None

    Cumulative area ≤ 5%

    Cumulative area ≤ 10%

    Contamination

    None


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