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| Property | Value | Specification | Application |
|---|---|---|---|
| Crystal Structure | Perovskite | Cubic, a = 3.87 Å | Substrate for oxide electronics |
| Purity | 99.9% | Standard grade | Molecular beam epitaxy |
| Size | 10 mm x 10 mm x 0.5 mm | Custom sizes available | Laser applications |
| Growth Method | Liquid phase epitaxy | High-quality crystal growth | Photovoltaics |
| Temperature Stability | -196°C to 600°C | Wide thermal range | Cryogenics |