SiC Substrate
Description
Silicon carbide (SiC) is a binary compound of Group IV-IV, it's the only stable solid compound in Group IV of the Periodic Table, It's an important semiconductor. SiC has excellent thermal, mechanical, chemical and electrical properties, which make it to be the one of the best materials for making high-temperature, high-frequency, and high-power electronic devices, the SiC also can be used as a substrate material for GaN-based blue light-emitting diodes. At present, 4H-SiC is the mainstream products in the market, and the conductivity type is divided into semi-insulating type and N type.
Properties
| Item |
2 inch 4H N-type |
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| Diameter |
2inch (50.8mm) |
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| Thickness |
350+/-25um |
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| Orientation |
off axis 4.0˚ toward <1120> ± 0.5˚ |
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| Primary Flat Orientation |
<1-100> ± 5° |
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| Secondary Flat Orientation |
90.0˚ CW from Primary Flat ± 5.0˚, Si Face up |
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| Primary Flat Length |
16 ± 2.0 |
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| Secondary Flat Length |
8 ± 2.0 |
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| Grade |
Production grade (P) |
Research grade (R) |
Dummy grade (D) |
| Resistivity |
0.015~0.028 Ω·cm |
< 0.1 Ω·cm |
< 0.1 Ω·cm |
| Micropipe Density |
≤ 1 micropipes/ cm² |
≤ 1 0micropipes/ cm² |
≤ 30 micropipes/ cm² |
| Surface Roughness |
Si face CMP Ra <0.5nm, C Face Ra <1 nm |
N/A, usable area > 75% |
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| TTV |
< 8 um |
< 10um |
< 15 um |
| Bow |
< ±8 um |
< ±10um |
< ±15um |
| Warp |
< 15 um |
< 20 um |
< 25 um |
| Cracks |
None |
Cumulative length ≤ 3 mm |
Cumulative length ≤10mm, |
| Scratches |
≤ 3 scratches, cumulative |
≤ 5 scratches, cumulative |
≤ 10 scratches, cumulative |
| Hex Plates |
maximum 6 plates, |
maximum 12 plates, |
N/A, usable area > 75% |
| Polytype Areas |
None |
Cumulative area ≤ 5% |
Cumulative area ≤ 10% |
| Contamination |
None |
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