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| Dimension | Value | Comments |
|---|---|---|
| Crystal Orientation | (111) | Optimal for semiconductor applications |
| Substrate Thickness | 500 µm | Standard thickness for most applications |
| Diameter | 2 inch | Compatible with various equipment |
| Surface Roughness | < 10 nm | Ensures high-quality film growth |
| Doping Type | N-Type | Enhances electrical conductivity |
| Quality Assurance | ISO 9001 | Certified for high standards |